• 专利附录
  • 专利说明
  • 权利要求
  • 类似技术
  • 同族专利
  • 引用文献
  • 法律状态
  • 优先权
    • 专利摘要:
    The present invention discloses a method for producing flash ypyrom. The disclosed method of manufacturing a flash ypyrom of the present invention includes providing a silicon substrate on which a tunnel oxide film, a first polysilicon film, an ONO film, a second polysilicon film, and a first layered insulating film are stacked; Patterning the stacked films using a magnetic alignment mask; Sequentially forming a polysilicon oxide film and a high temperature oxide film having a predetermined thickness on the entire upper portion; Etching the high temperature oxide film and the polysilicon oxide film to form a spacer on one sidewall of the laminated film; Depositing and patterning a nitride film over the whole; And depositing a third polysilicon film over the whole.
    公开号:KR19980058436A
    申请号:KR1019960077760
    申请日:1996-12-30
    公开日:1998-10-07
    发明作者:장준호；홍성희
    申请人:김영환；현대전자산업 주식회사；
    IPC主号:
    专利说明:

    Flash Ipyrom production method.
    BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method for manufacturing a flash memory device. More specifically, the present invention relates to a flash Y pyrom for preventing undercuts generated during an oxide film removing process when a split gate of a flash Y pyrom is manufactured. It relates to a manufacturing method.
    In general, a flash memory device is manufactured by taking advantage of EPROM having a program and erase characteristic and EEPROM having a program and erase characteristic. Such a flash memory device is a transistor that realizes a storage state of one bit as one transistor and is electrically programmable and erased, wherein the flash is an entire memory block or a large block during the erase operation of the device. implies that blocks are deleted at the same time.
    In addition, the flash IPIROM program and erase uses a 12V / 5V power supply, the program uses hot electrons caused by an external high voltage, and the erase is operated by using a fowler-nordheim (FN) tunneling. .
    Referring to Figures 1A to 1C, a method for manufacturing a flash ypyrom according to the prior art having the above characteristics is as follows.
    Referring to FIG. 1A, a thin-film tunnel oxide film 2 and a first polysilicon film 3 for floating gate electrodes are formed on a silicon substrate 1, and an ONO film having excellent insulating property thereon ( Oxide Nitride Oxide: 4) is formed. Then, after forming the second polysilicon film 5 and the first interlayer insulating film 6 for the control gate electrode, the first interlayer insulating film 6 and the second poly using a self-aligning mask are formed. The silicon film 5, the ONO film 4, the first polysilicon film 3 and the tunnel oxide film 2 are patterned.
    Referring to FIG. 1B, a polysilicon oxide film 7, a high temperature oxide film 8, and a nitride film 9, which is a second interlayer insulating film, having a predetermined thickness are sequentially formed on the whole.
    Referring to FIG. 1C, portions of the nitride layer 9, the high temperature oxide layer 8, and the polysilicon oxide layer 7 are removed by an etching process using a cell spacer mask. As a result, a spacer made of a nitride film 9, a high temperature oxide film 8 and a polysilicon film 7 is formed on one side of the red body, and the nitride film 9 and the high temperature oxide film 8 on the first interlayer insulating film are formed. A part of the polysilicon film 7 is removed. Then, the third polysilicon film 10 for the select gate electrode is formed on the entire upper portion to form a split gate.
    However, in the prior art as described above, when forming a spacer using a cell spacer mask, a high temperature oxide film and a polysilicon oxide film are etched in the lower portion of the spacer, and an undercut phenomenon occurs, thereby causing the characteristics of the high temperature oxide film and the polysilicon oxide film. There was a problem that this was lowered and a leakage current was generated between the first polysilicon film and the third polysilicon film, resulting in a data storage defect.
    Accordingly, the present invention forms a polysilicon oxide film and a high temperature oxide film when forming a cell spacer, and then forms a spacer by etching the films by blanket etching, and then forms a nitride film on the spacer, thereby forming a high temperature oxide film and It is an object of the present invention to provide a flash y-pyromium manufacturing method which can improve device characteristics and reliability by preventing the deterioration of the performance of the polysilicon film and the occurrence of leakage current between the third polysilicon film and the first polysilicon film. .
    1A to 1C are cross-sectional views illustrating a method for manufacturing a flash ypyrom according to the prior art.
    2A and 2B are cross-sectional views illustrating a method for manufacturing a flash ypyrom according to the present invention.
    * Explanation of symbols for the main parts of the drawings
    11 silicon substrate, 12 tunnel oxide film, 13 first polysilicon film, 14 ONO film, 15 second polysilicon film, 16 first interlayer insulating film, 17 polysilicon oxide film, 18 high temperature oxide film, 19 : Nitride film, 20: third polysilicon film
    The above object is to provide a silicon substrate in which a tunnel oxide film, a first polysilicon film, an ONO film, a second polysilicon film and a first interlayer insulating film are stacked; Patterning the stacked films using a self alignment mask; Sequentially forming a polysilicon oxide film and a high temperature oxide film having a predetermined thickness on the entire upper portion; Etching the high temperature oxide film and the polysilicon oxide film to form a spacer on one sidewall of the laminated film; Depositing and patterning a nitride film over the whole; And depositing a third polysilicon film over the entire surface.
    According to the present invention, the undercut phenomenon can be prevented from occurring by blanket etching the high temperature oxide film and the polysilicon oxide film to form a spacer, and even if the undercut shape occurs, the third polysilicon film and the second polysilicon due to the nitride film The occurrence of leakage current between the films can be prevented.
    EXAMPLE
    Hereinafter, preferred embodiments of the present invention will be described in more detail with reference to FIGS. 2A and 2B.
    Referring to FIG. 2A, a thin tunnel oxide film 12 and a first polysilicon film 13 for floating gate electrodes are formed on a silicon substrate 11, and an ONO film 14 is formed thereon. Form. Then, after forming the second polysilicon film 15 and the first interlayer insulating film 16 for the control gate electrode, the first interlayer insulating film 16 and the second polysilicon film 15 using a self-aligning mask. ), The ONO film 14, the first polysilicon film 13 and the tunnel oxide film 12 are patterned.
    Then, a polysilicon oxide film 17 and a high temperature oxide film 18 having a predetermined thickness are sequentially formed on the entire surface, and then only a portion of the high temperature oxide film 18 and the polysilicon oxide film 17 is blanketed to form a selection gate. Etching forms spacers on one sidewall of the patterned films. Subsequently, the nitride film 19 is deposited and patterned on the whole.
    In the above, since the blanket etching mainly etches the films on the active region of the silicon substrate 11 rather than the spacers, it is possible to prevent the undercut phenomenon from occurring in the high temperature oxide film 18 and the polysilicon oxide film 17 below the spacer. Since the undercut is compensated for the undercut in the deposition process of the nitride film 19 even when the undercut occurs, a leakage current is generated between the third polysilicon film and the first polysilicon film 13 formed in a subsequent process. You can prevent it.
    Referring to FIG. 2B, a split gate is formed by forming a third polysilicon film 20 for a select gate electrode on the entire top.
    As described above, in the method of manufacturing a flash Y pyrom of the present invention, an undercut phenomenon occurs in the lower portion of the cell spacer to prevent deterioration of the high temperature oxide film and the polysilicon oxide film, thereby improving the characteristics and reliability of the flash memory device. have.
    Meanwhile, although specific embodiments of the present invention have been described and illustrated, modifications and variations can be made by those skilled in the art. Accordingly, the following claims are to be understood as including all modifications and variations as long as they fall within the true spirit and scope of the present invention.
    权利要求:
    Claims (2)
    [1" claim-type="Currently amended] Providing a silicon substrate on which a tunnel oxide film, a first polysilicon film, an ONO film, a second polysilicon film, and a first interlayer insulating film are stacked;
    Patterning the stacked films using a self alignment mask;
    Sequentially forming a polysilicon oxide film and a high temperature oxide film having a predetermined thickness on the entire upper portion;
    Etching the high temperature oxide film and the polysilicon oxide film to form a spacer on one sidewall of the laminated film;
    Depositing and patterning a nitride film over the whole; And
    And depositing a third polysilicon film over the entire surface.
    [2" claim-type="Currently amended] The method of claim 1, wherein the etching process for forming the spacer is a blanket etching.
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    同族专利:
    公开号 | 公开日
    引用文献:
    公开号 | 申请日 | 公开日 | 申请人 | 专利标题
    法律状态:
    1996-12-30|Application filed by 김영환, 현대전자산업 주식회사
    1996-12-30|Priority to KR1019960077760A
    1998-10-07|Publication of KR19980058436A
    优先权:
    申请号 | 申请日 | 专利标题
    KR1019960077760A|KR19980058436A|1996-12-30|1996-12-30|Flash Ipyrom Production Method|
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